Document Type

Conference Proceeding

Publisher

IEEE

Faculty

Computing, Health and Science

School

School of Engineering and Mathematics, Centre for Communications Engineering Research

RAS ID

3468

Comments

This conference paper was originally published as: Jansz-Dravetzky, P., & Hinckley, S. (2004). Guard-Ring Electrode Effects on Crosstalk in Simulated 2D CMOS Compatible Vertical Photodiode Pixel Arrays. Proceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices. (pp. 299-302). Brisbane. IEEE. Original article available here

© 2004 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Abstract

In this study, we have simulated the electrical crosstalk in back-illuminated and front-illuminated photodiode arrays as a function of substrate thickness and junction depth for single junction photodiode pixels, with and without guard-ring electrodes. The physical mechanisms responsible for electrical crosstalk suppression are explained using an absorption volume proportion concept. The results obtained show that significant crosstalk suppression can be achieved for back-illuminated thin substrate guarded-pixel arrays

DOI

10.1109/COMMAD.2004.1577550

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Link to publisher version (DOI)

10.1109/COMMAD.2004.1577550