Document Type
Conference Proceeding
Publisher
IEEE
Faculty
Computing, Health and Science
School
School of Engineering and Mathematics, Centre for Communications Engineering Research
RAS ID
3468
Abstract
In this study, we have simulated the electrical crosstalk in back-illuminated and front-illuminated photodiode arrays as a function of substrate thickness and junction depth for single junction photodiode pixels, with and without guard-ring electrodes. The physical mechanisms responsible for electrical crosstalk suppression are explained using an absorption volume proportion concept. The results obtained show that significant crosstalk suppression can be achieved for back-illuminated thin substrate guarded-pixel arrays
Comments
This conference paper was originally published as: Jansz-Dravetzky, P., & Hinckley, S. (2004). Guard-Ring Electrode Effects on Crosstalk in Simulated 2D CMOS Compatible Vertical Photodiode Pixel Arrays. Proceedings of 2004 Conference on Optoelectronic and Microelectronic Materials and Devices. (pp. 299-302). Brisbane. IEEE. Original article available here