Document Type
Conference Proceeding
Publisher
IEEE Press
Faculty
Faculty of Computing, Health and Science
School
School of Engineering
RAS ID
5524
Abstract
The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.
DOI
10.1109/COMMAD.2008.4802115
Access Rights
free_to_read
Comments
This is an Author's Accepted Manuscript of: Jansz, P. V., & Hinckley, S. (2008). Double Boundary Trench Isolation Effects on a Stacked Gradient Homojunction Photodiode Array. Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. . (pp. 156-159). Hilton, Sydney NSW. IEEE Press. Available here
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