Document Type

Conference Proceeding

Publisher

IEEE Press

Faculty

Computing, Health and Science

School

Engineering

RAS ID

5524

Comments

This article was originally published as: Jansz, P. V., & Hinckley, S. (2008). Double Boundary Trench Isolation Effects on a Stacked Gradient Homojunction Photodiode Array. Proceedings of Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. . (pp. 156-159). Hilton, Sydney NSW. IEEE Press. Original article available here

© 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Abstract

The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.

DOI

10.1109/COMMAD.2008.4802115

Access Rights

free_to_read

Included in

Engineering Commons

 
COinS
 

Link to publisher version (DOI)

10.1109/COMMAD.2008.4802115