Title

Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

Document Type

Journal Article

Publisher

A I P Publishing LLC

Place of Publication

United States

School

School of Science

RAS ID

24410

Comments

Originally published as: Zhou, G., Sun, B., Yao, Y., Zhang, H., Zhou, A., Alameh, K., ... Song, Q. (2016). Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires. Applied Physics Letters, 109(14), Article number 143904. Available here.

Abstract

MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼102 for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. © 2016 Author(s).

DOI

10.1063/1.4962655

Access Rights

Not open access

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