Plasmonic-based GaAs Balanced Metal-Semiconductor-Metal Photodetector with High Common Mode Rejection Ratio
Faculty of Computing, Health and Science
Electron Science Research Institute
We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (B-MSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSM-PD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the B-MSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.