Document Type

Journal Article

Publisher

IEEE Electron Devices Society

Faculty

Computing, Health and Science

School

Electron Science Research Institute

RAS ID

4665

Comments

This article was originally published as: Brouk, I., Alameh, K. , & Nemirovsky, Y. (2007). Design and Characterization of CMOS/SOI Image Sensors. IEEE Transactions on Electron Devices, 54(3), pp. 468-475. Original article available here

© 2007 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Abstract

The design, operation, and characterization of CMOS imagers implemented using: 1) "regular" CMOS wafers with a 0.5-mum CMOS analog process; 2) "regular" CMOS wafers with a 0.35-mum CMOS analog process; and 3) silicon-on-insulator (SOI) wafers in conjunction with a 0.35-mum CMOS analog process, are discussed in this paper. The performances of the studied imagers are compared in terms of quantum efficiency, dark current, and optical bandwidth. It is found that there is strong dependence of quantum efficiency of the photodiodes on the architecture of the image sensor. The results of this paper are useful for designing and modeling CMOS/SOI image sensors

DOI

10.1109/TED.2006.890585

Access Rights

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Link to publisher version (DOI)

10.1109/TED.2006.890585