Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes

Authors

Edward A. Gluszak, Edith Cowan University
Steven Hinckley, Edith Cowan UniversityFollow
B J. Griffin

Document Type

Conference Proceeding

Publisher

IEEE

Faculty

Faculty of Computing, Health and Science

School

School of Engineering / Centre for Communications Engineering Research

RAS ID

13

Comments

Gluszak, E. A., Hinckley, S., & Griffin, B. J. (2000). Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes. In Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on (pp. 479-482). IEEE. Available here

Abstract

A novel electron-beam characterization technique called Charge Contrast Imaging has been used to identify the type and spatial extent of doping and electrically active defects in MWIR reactive-ion etched (RIE) HgCdTe n-on-p photodiodes. In this technique, improved electro-morphological sensitivity to the material is observed. Quantitative characterization of the beam effects upon the junction properties is modelled upon experimental results using Laser Beam Induced Current Techniques (LBIC).

DOI

10.1109/COMMAD.2000.1022994