Document Type
Conference Proceeding
Publisher
IEEE
Faculty
Faculty of Computing, Health and Science
School
Electron Science Research Institute (ESRI)
RAS ID
10449
Abstract
In this paper, we use the finite difference timedomain (FDTD) method to optimize the light absorption of an ultrafast plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. The MSM-PD is optimized geometrically, leading to improved light absorption near the designed wavelength of GaAs through plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 10-times light absorption enhancement at 867 nm due to surface plasmon polaritons (SPPs) propagation through the metal nano-grating, in comparison to conventional MSM-PD.
DOI
10.1109/HONET.2010.5715761
Access Rights
free_to_read
Comments
This is an Author's Accepted Manuscript of: Karar, A. , Das, N. K., Tan, C., Alameh, K. , & Lee, Y. T. (2010). Design of High-Sensitivity Plasmonics-Assisted GaAs Metal-Semiconductor-Metal Photodetectors. Proceedings of International Symposium on High Capacity Optical Networks & Enabling Technologies. (pp. 138-142). . Cairo, Egypt . IEEE. Available here
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