Document Type

Conference Proceeding

Publisher

IEEE

Faculty

Computing, Health and Science

School

Electron Science Research Institute (ESRI)

RAS ID

10449

Comments

This article was originally published as: Karar, A. , Das, N. K., Tan, C., Alameh, K. , & Lee, Y. T. (2010). Design of High-Sensitivity Plasmonics-Assisted GaAs Metal-Semiconductor-Metal Photodetectors. Proceedings of International Symposium on High Capacity Optical Networks & Enabling Technologies. (pp. 138-142). . Cairo, Egypt . IEEE. Original article available here

Abstract

In this paper, we use the finite difference timedomain (FDTD) method to optimize the light absorption of an ultrafast plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. The MSM-PD is optimized geometrically, leading to improved light absorption near the designed wavelength of GaAs through plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 10-times light absorption enhancement at 867 nm due to surface plasmon polaritons (SPPs) propagation through the metal nano-grating, in comparison to conventional MSM-PD.

DOI

10.1109/HONET.2010.5715761

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Link to publisher version (DOI)

10.1109/HONET.2010.5715761