Metal nano-grating optimization for higher responsivity plasmonic-based GaAs metal-semiconductor-metal photodetector
Document Type
Journal Article
Publisher
Institute of Electrical and Electronics Engineers
Faculty
Faculty of Health, Engineering and Science
School
Electron Science Research Institute
RAS ID
16641
Abstract
To improve the responsivity of the metal semiconductor metal photodetector (MSM-PD), we propose and demonstrate the use of sub-wavelength slits in conjunction with nano-structured the metal fingers that enhance the light transmission through plasmonic effects. A 4-finger plasmonics-based GaAs MSM-PD structure is optimized geometrically using a 2-D Finite Difference Domain (FDTD) method and developed, leading to more than 7-times enhancement in photocurrent in comparison with the conventional MSM-PD of similar dimensions at a bias voltage as low as 0.3 V. This enhancement is attributed to the coupling of the surface plasmon polaritons (SPPs) with the incident light through the nano-structured metal fingers. This work paves the way for the development of high-responsivity, high-sensitivity, low bias-voltage high-speed MSM-PDs and CMOS-compatible GaAs-based optoelectronic devices.
DOI
10.1109/JLT.2013.2243108
Comments
Karar, A. , Tan, C., Alameh, K. , Lee, Y., & Karouta, F. (2013). Metal nano-grating optimization for higher responsivity plasmonic-based GaAs metal-semiconductor-metal photodetector. Journal of Lightwave Technology, 31(7), 1088-92. 10.1109/JLT.2013.2243108. Available here