Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

Authors

Guangdong Zhou
Bai Sun
Yanqing Yao
Huihui Zhang
Ankun Zhou
Kamal E. Alameh, Edith Cowan UniversityFollow
Baofu Ding, Edith Cowan UniversityFollow
Qunliang Song

Document Type

Journal Article

Publication Title

Applied Physics Letters

Publisher

A I P Publishing LLC

Place of Publication

United States

School

School of Science

RAS ID

24410

Comments

Zhou, G., Sun, B., Yao, Y., Zhang, H., Zhou, A., Alameh, K., ... Song, Q. (2016). Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires. Applied Physics Letters, 109(14), Article number 143904. Available here.

Abstract

MoSe₂-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe₂-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼10² for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. © 2016 Author(s).

DOI

10.1063/1.4962655

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