Title

Modeling of Device Structure Effects in Backside Illuminated CMOS Compatible Photodiodes

Document Type

Conference Proceeding

Faculty

Faculty of Computing, Health and Science

School

School of Engineering / Centre for Communications Engineering Research

RAS ID

14

Comments

S. Hinckley, E. A. Gluszak and K. Eshraghian, "Modelling of device structure effects in backside illuminated CMOS compatible photodiodes," COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices, Bundoora, Victoria, Australia, 2000, pp. 399-402.

Abstract

A backside illuminated CMOS photodiode consisting of an n+ (source implant) emitter and P-substrate base has been numerically simulated in a 1D approximation. The effects of device dimensions (junction depth and photodiode thickness), emitter and base dopant concentrations have been examined in relation to the spectral dependence of the quantum efficiency. The calculations indicate that greater control over the spectral response of the photodiode can be realised for a backside-illuminated photodiode, compared to the normal frontside illuminated structure of current Camera on a CMOS chip technology.

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