Contactless junction contrast of HgCdTe n-on-p-type structures obtained by reactive ion etching induced p-to-n conversion
Faculty of Computing, Health and Science
School of Engineering and Mathematics
The continuous shrinking of HgCdTe device dimensions in micro- and opto-electronics requires the development of new non-destructive methods able to determine the quality of etching techniques, junction integrity, doping profiles, and the presence of electrically active defects with nanometer resolution. In this paper, we have used a contactless contrast imaging technique to examine junction integrity and recombination activity in n-on-p HgCdTe mid-wave infrared (MWIR) photodiodes. This method allows the direct imaging of junctions, type conversions, dislocation densities, and diffusion profiles as an electromorphological map of the wafer. Experimental and theoretical laser-beam induced current (LBIC) analysis have been used to confirm the results of imaging studies, and to elucidate the effects of the electron beam on the device structure and integrity.
Gluszak, E. A. & Hinckley, S. (2001). Contactless junction contrast of hg cd te n-on-p-type structures obtained by reactive ion etching induced p-to-n conversion. Journal of Electronic Materials, 30(6), 768-773. Available here.