Bloomsbury Publishing India Pvt. Ltd
Faculty of Computing, Health and Science
Electron Science Research Institute
In this paper we present a study conducted on RF sputtered garnet films of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 prepared by using low and high substrate temperatures during the deposition process inside the vacuum chamber of sputtering system. Comparatively low coercive force is achieved in garnet films prepared at high substrate temperature of 680°C simultaneously with high MO quality and almost in-plane magnetization direction, which are the properties desired in various MO sensing, switching and imaging applications.