Effect of post deposition annealing on the sensing properties of thin film ruthenium oxide (ruo2) pH sensor

Document Type

Journal Article

Publication Title

IEEE Sensors Journal

Volume

24

Issue

8

First Page

12498

Last Page

12503

Publisher

IEEE

School

School of Science

RAS ID

65513

Comments

Shylendra, S. P., Wajrak, M., Alameh, K., & Kang, J. J. (2024). Effect of post deposition annealing on the sensing properties of thin film ruthenium oxide (ruo2) pH sensor. IEEE Sensors Journal, 24(8), 12498-12503. https://doi.org/10.1109/JSEN.2024.3370914

Abstract

The use of ruthenium oxide (RuO2) as a pH sensor is a relatively novel idea and understanding how preparation of the sensor effects and its sensing properties is crucial. In this article, the effect of annealing temperature on the sensing properties of the sputtered RuO2 thin-film pH sensor was examined. It was found that annealing RuO2 at temperatures above 200 °C resulted in increased crystallinity and did not significantly alter the elemental composition. The sensor performance however was found to decrease with increased annealing temperature. Electrodes annealed above 400 °C had significantly higher hysteresis widths and drift rates, almost ten times the values of electrodes annealed at below 400 °C. Electrodes annealed at temperatures below 400 °C exhibited acceptable hysteresis widths of less than 2.5 mV. Consequently, in the manufacture of functional RuO2 pH sensors with a screen-printed Pt contact layer, it is recommended that the manufacturing temperature should not exceed 400 °C, post sputter deposition of RuO2.

DOI

10.1109/JSEN.2024.3370914

Access Rights

subscription content

Link to Full Text

Share

 
COinS