Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
A I P Publishing LLC
Place of Publication
School of Science
MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼102 for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. © 2016 Author(s).