Comparison of Si, SiGe and GaAs photovoltaic microcells for power-over-fibre

Document Type

Conference Proceeding


Institute of Electrical and Electronics Engineers


School of Science


Originally published as: Hinckley, S., Richardson, S., Allwood, G., & Wild, G. (2019). Comparison of Si, SiGe and GaAs photovoltaic microcells for power-over-fibre. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) (pp. 13-15). Original publication available here


Power-over-fibre (POF) has been demonstrated for remotely powering microelectronic devices in hazardous environments [1] and in telecommunication and smart grid applications [2]. The technique can also be used for supplying power to surveillance cameras which reduces their vulnerability to tampering [3]. Ultimately, POF will have significant applications in the development and implementation of all-optical sensor networks. However, there is a limit to the amount of power that can be transmitted via the optical fibre due to processes such as stimulated Brillouin scattering (SBS) [4]. As such, the aim of this study is to optimise the power delivered to different parts of an optical fibre network, in order to minimise the effects of processes such as SBS. This can be achieved by enhancing the performance of the photovoltaic microcell (also called a photovoltaic power converter, PPC) and tailoring it to match the power requirements of sensors or actuators scattering throughout the network.