Document Type
Journal Article
Faculty
Faculty of Computing, Health and Science
School
Electron Science Research Institute (ESRI)
RAS ID
12676
Abstract
We report the experimental characterization of high-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.
DOI
10.1063/1.3625937
Access Rights
free_to_read
Comments
This is an Author's Accepted Manuscript of: Karar, A. , Das, N. K., LeongTan, C., Alameh, K. , Tak Lee, Y., & Karouta, F. (2011). High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors. Applied Physics Letters, 99(13), art. no. 133112 (1-3). Available here