High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

Authors

Ayman Karar, Edith Cowan UniversityFollow
Narottam Das, Edith Cowan University
Chee LeongTan
Kamal Alameh, Edith Cowan UniversityFollow
Yong Tak Lee
Fouad Karouta

Document Type

Journal Article

Keywords

[RSTDPub], finite difference time-domain analysis, gallium arsenide, metal-semiconductor-metal structures, nanostructured materials, photoconductivity, photodetectors, plasmonics, surface plasmons

Faculty

Faculty of Computing, Health and Science

School

Electron Science Research Institute (ESRI)

RAS ID

12676

Comments

This is an Author's Accepted Manuscript of: Karar, A. , Das, N. K., LeongTan, C., Alameh, K. , Tak Lee, Y., & Karouta, F. (2011). High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors. Applied Physics Letters, 99(13), art. no. 133112 (1-3). Available here

Abstract

We report the experimental characterization of high-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.

Related Publications

Karar, A. A. (2013). Surface plasmons for enhanced metal-semiconductor-metal photodetectors. Retrieved from http://ro.ecu.edu.au/theses/593

Access Rights

free_to_read