Document Type

Journal Article

Faculty

Faculty of Computing, Health and Science

School

Electron Science Research Institute (ESRI)

RAS ID

12676

Comments

This article was originally published as: Karar, A. , Das, N. K., LeongTan, C., Alameh, K. , Tak Lee, Y., & Karouta, F. (2011). High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors. Applied Physics Letters, 99(13), art. no. 133112 (1-3). Original article available here

Abstract

We report the experimental characterization of high-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.

DOI

10.1063/1.3625937

 
COinS
 

Link to publisher version (DOI)

10.1063/1.3625937