Document Type
Conference Proceeding
Publisher
IEEE
Faculty
Faculty of Computing, Health and Science
School
Electron Science Research Institute (ESRI)
RAS ID
13030
Abstract
In this paper, we use the finite difference time-domain (FDTD) method to optimize the light absorption of an ultrafast nano-grating plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing double metal nano-gratings. The geometry of the MSM-PD is theoretically investigated, leading to improved light absorption near the design wavelength of GaAs due to plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 8- and 21-times light absorption enhancement for the single and double nano-grating structure, respectively, in comparison to conventional MSM-PDs. Experimentally, more than 4 times enhancement in photocurrent is demonstrated for a single top nano-grating MSM-PD in comparison with conventional MSM-PDs.
DOI
10.1109/HONET.2011.6149782
Access Rights
free_to_read
Included in
Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons
Comments
This is an Author's Accepted Manuscript of: Karar, A. , Tan, C., Alameh, K. , & Lee, Y. (2011). Nano-patterned high-responsivity GaAs metal-semiconductor-metal photodetector. Paper presented at High-Capacity Optical Networks and Enabling Technologies (HONET) 2011, Riyadh, Saudi Arabia. Available here
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