Document Type

Conference Proceeding

Publisher

IEEE

Faculty

Faculty of Computing, Health and Science

School

Electron Science Research Institute (ESRI)

RAS ID

13030

Comments

This article was originally published as: Karar, A. , Tan, C., Alameh, K. , & Lee, Y. (2011). Nano-patterned high-responsivity GaAs metal-semiconductor-metal photodetector. Paper presented at High-Capacity Optical Networks and Enabling Technologies (HONET) 2011, Riyadh, Saudi Arabia. Original article available here

Abstract

In this paper, we use the finite difference time-domain (FDTD) method to optimize the light absorption of an ultrafast nano-grating plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing double metal nano-gratings. The geometry of the MSM-PD is theoretically investigated, leading to improved light absorption near the design wavelength of GaAs due to plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 8- and 21-times light absorption enhancement for the single and double nano-grating structure, respectively, in comparison to conventional MSM-PDs. Experimentally, more than 4 times enhancement in photocurrent is demonstrated for a single top nano-grating MSM-PD in comparison with conventional MSM-PDs.

 
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