Document Type

Conference Proceeding

Publisher

IEEE

Faculty

Faculty of Computing, Health and Science

School

Electron Science Research Institute (ESRI)

RAS ID

13030

Comments

This article was originally published as: Karar, A. , Tan, C., Alameh, K. , & Lee, Y. (2011). Nano-patterned high-responsivity GaAs metal-semiconductor-metal photodetector. Paper presented at High-Capacity Optical Networks and Enabling Technologies (HONET) 2011, Riyadh, Saudi Arabia. Original article available here

© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Abstract

In this paper, we use the finite difference time-domain (FDTD) method to optimize the light absorption of an ultrafast nano-grating plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing double metal nano-gratings. The geometry of the MSM-PD is theoretically investigated, leading to improved light absorption near the design wavelength of GaAs due to plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 8- and 21-times light absorption enhancement for the single and double nano-grating structure, respectively, in comparison to conventional MSM-PDs. Experimentally, more than 4 times enhancement in photocurrent is demonstrated for a single top nano-grating MSM-PD in comparison with conventional MSM-PDs.

DOI

10.1109/HONET.2011.6149782

Access Rights

free_to_read

 
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Link to publisher version (DOI)

10.1109/HONET.2011.6149782