Plasmonic-based GaAs Balanced Metal-Semiconductor-Metal Photodetector with High Common Mode Rejection Ratio

Document Type

Conference Proceeding

Publisher

IEEE

Faculty

Faculty of Computing, Health and Science

School

Electron Science Research Institute

RAS ID

14925

Comments

Karar, A. , Tan, C., Alameh, K. , & Lee, Y. T. (2012). Plasmonic-based GaAs Balanced Metal-Semiconductor-Metal Photodetector with High Common Mode Rejection Ratio. Proceedings of 2012 9th International Conference on High Capacity Optical Networks & Enabling Technologies (HONET). (pp. 167-170). Istanbul, Turkey. IEEE. Available here

Abstract

We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (B-MSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSM-PD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the B-MSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.

DOI

10.1109/HONET.2012.6421456

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