Plasmonic-based GaAs Balanced Metal-Semiconductor-Metal Photodetector with High Common Mode Rejection Ratio
Document Type
Conference Proceeding
Keywords
Balanced photodetectors, Common mode Rejection Ratio, FDTD methods, MSM photodetectors, surface plasmon polaritonsApplied bias, Common mode rejection ratio, Dual-beam, FIB/SEM, GaAs, Laser intensity noise, Metal semiconductor metal photodetector, Monolithic integration, MSM photodetector, Nano-gratings, Optical telecommunication system, Semiconductor circuits, Surface plasmon polaritons, Ultra high speed, Electromagnetic wave polarization, Fiber optic networks, Finite difference time domain method, Gallium arsenide, Monolithic integrated circuits, Photons, Plasmons, Semiconducting gallium, Surface plasmon resonance, Photodetectors
Publisher
IEEE
Faculty
Faculty of Computing, Health and Science
School
Electron Science Research Institute
RAS ID
14925
Abstract
We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (B-MSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSM-PD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the B-MSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.
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Comments
Karar, A. , Tan, C., Alameh, K. , & Lee, Y. T. (2012). Plasmonic-based GaAs Balanced Metal-Semiconductor-Metal Photodetector with High Common Mode Rejection Ratio. Proceedings of 2012 9th International Conference on High Capacity Optical Networks & Enabling Technologies (HONET). (pp. 167-170). Istanbul, Turkey. IEEE. Available here