Title

Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

Document Type

Journal Article

Publisher

Elsevier Ltd

School

School of Engineering

RAS ID

19536

Comments

Originally published as: Fang, F., Zhang, Y., Wu, X., Shao, Q., & Xie, Z. (2015) Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering. Materials Research Bulletin, 68, 240-244. Original article available here.

Abstract

Nitrogen-doped tin oxide (SnO2:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO2:N films were amorphous state, and O/Sn ratios of SnO2:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO2:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO2:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO2:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10−4 Ω cm.

DOI

10.1016/j.materresbull.2015.03.072

Access Rights

Open access