Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering
Abstract
Nitrogen-doped tin oxide (SnO2:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO2:N films were amorphous state, and O/Sn ratios of SnO2:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO2:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO2:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO2:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10−4 Ω cm.
Document Type
Journal Article
Date of Publication
2015
Publisher
Elsevier Ltd
School
School of Engineering
RAS ID
19536
Copyright
subscription content
Comments
Fang, F., Zhang, Y., Wu, X., Shao, Q., & Xie, Z. (2015) Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering. Materials Research Bulletin, 68, 240-244. Available here.