Analysis of nano-grating-assisted light absorption enhancement in metal-semiconductor-metal photodetectors patterned using focused ion-beam lithography

Document Type

Journal Article

Publisher

Elsevier

Faculty

Faculty of Computing, Health and Science

School

Electron Science Research Institute (ESRI)

RAS ID

12556

Comments

Das, N., Karar, A., Vasiliev, M., Tan, C.L., Alameh, K., & Lee, Y.T. (2011). Analysis of nano-grating-assisted light absorption enhancement in metal–semiconductor–metal photodetectors patterned using focused ion-beam lithography. Optics Communications, 284, (6), 1694–1700. Available here

Abstract

We present finite-difference time-domain (FDTD) analysis results of light absorption enhancement factor dependence on the profile shape of nano-gratings etched into the surfaces of metal–semiconductor–metal photodetector (MSM-PD) structures. The MSM-PDs patterned by nano-gratings are optimized geometrically, improving the light absorption near the design wavelength through plasmon-assisted electric field concentration effects. FDTD simulation results show about 50 times light absorption enhancement prediction for 850 nm light due to improved optical signal propagation through the nano-gratings in comparison with the conventional MSM-PD designs employing only a subwavelength aperture. We also report on the nano-grating profile shapes obtained typically in our experiments using focused ion-beam lithography and discuss the dependency of light absorption enhancement on the geometric parameters of nano-gratings inscribed into MSM-PDs. --------------------------------------------------------------------------------

DOI

10.1016/j.optcom.2010.11.065

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Link to publisher version (DOI)

10.1016/j.optcom.2010.11.065