Author Identifier (ORCID)
Mohammad Nur-E-Alam: https://orcid.org/0000-0003-1969-3348
Abstract
Copper doping in zinc telluride (ZnTe) thin films has been extensively studied for optoelectronic applications; however, challenges remain in optimizing temperature-dependent diffusion while minimizing defect-related emissions. Although numerous studies have explored Cu-doped ZnTe, comprehensive investigations using electron-beam (E-beam) evaporation remain limited, especially concerning its influence on diffusion dynamics, defect formation, and electrical properties. This study systematically examined Cu-doped ZnTe films fabricated via E-beam evaporation with a fixed 50 nm Cu layer deposited at three substrate temperatures (RT, 150 °C, and 300 °C), followed by rapid thermal annealing (RTA) at 100 °C and 200 °C for 1 h under a nitrogen atmosphere. An as-cast (non-annealed) sample was also analyzed as a baseline reference. By investigating the interplay between deposition and annealing temperatures, this work provided new insights into temperature-driven diffusion control mechanisms and their influence on the structural, morphological, and electrical properties of ZnTe: Cu films. The optimal sample (ZT-Cu_150_A200) exhibited a carrier concentration of 1.33 × 1020 cm−3, a resistivity of 3.77 × 10−5 Ω cm, and a mobility of 1.68 × 103 cm2/V·s, significantly improving electrical conductivity while minimizing defect-related losses. These findings establish a crucial correlation between thermal activation, Cu diffusion dynamics, and defect passivation, offering a refined approach for optimizing Cu-doped ZnTe thin films for enhanced electronic performance.
Document Type
Journal Article
Date of Publication
9-1-2025
Volume
10
Issue
3
Publisher
Elsevier
School
School of Science
RAS ID
83439
Funders
Ministry of Higher Education of Malaysia (JPT.S(BPKI)2000/016/018/015JId.4(21)/2022003HICOE)
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Comments
Salah, S., Doroody, C., Za’abar, F. ‘., Feng, Z., Krishnan, P. S., Zuhdi, A. W. M., Harif, M. N., Ahmad, N. I., Kar, Y. B., & Nur-E-Alam, M. (2025). Temperature-dependent properties of CU-doped ZnTe thin films deposited on SLG substrates via RF magnetron sputtering and E-beam techniques. Journal of Science Advanced Materials and Devices, 10(3), 100944. https://doi.org/10.1016/j.jsamd.2025.100944