Hierarchically porous hydrangea-like In2S3/In2O3 heterostructures for enhanced photocatalytic hydrogen evolution

Abstract

© 2020 Elsevier Inc. Semiconductor-based photocatalytic hydrogen evolution is considered to be a promising and cost-effective approach to address the environmental issues and energy crisis. It still remains a great challenge to design highly-efficient semiconductor photocatalysts via a facile method. Herein, hierarchically porous hydrangea-like In2S3/In2O3 heterostructures are successfully synthesized via a simple in situ oxidization process. The formed In2S3/In2O3 heterostructures exhibit superior photocatalytic activity to the counterpart In2S3 and In2O3. The boosted photocatalytic performance is ascribed to the formed heterostructures, which greatly facilitate the interfacial charge transfer. Moreover, the formation of hierarchically porous heterostructures increases the number of active sites and improves the permeability, and thus significantly promotes the photocatalytic H2 evolution activity. This work may provide a new insight for designing In2S3-based heterostructures for efficient solar light conversion.

RAS ID

32846

Document Type

Journal Article

Date of Publication

2021

Volume

587

Funding Information

National Natural Science Foundation of China Key Scientific Research Project of Colleges and Universities in Henan Province Program for Science & Technology Innovative Research Team in University of Henan Province Innovative Experimental Projects for College Students of Shangqiu Normal University Starting Research Fund of Shangqiu Normal University and CSC scholarship

PubMed ID

33239215

School

School of Engineering

Copyright

subscription content

Publisher

Elsevier

Comments

Liu, M., Li, P., Wang, S., Liu, Y., Zhang, J., Chen, L., ... Sun, H. (2021). Hierarchically porous hydrangea-like In2S3/In2O3 heterostructures for enhanced photocatalytic hydrogen evolution. Journal of Colloid and Interface Science, 587, 876-882. https://doi.org/10.1016/j.jcis.2020.11.048

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Link to publisher version (DOI)

10.1016/j.jcis.2020.11.048