High-efficiency silicon solar cells designed on experimentally achieved nano-engineered low-reflective silicon surface
Document Type
Journal Article
Publication Title
Journal of Optics
Volume
53
First Page
3849
Last Page
3863
Publisher
Springer
School
School of Science
RAS ID
64626
Funders
King Saud University, Riyadh, Saudi Arabia / Department of Glass and Ceramic Engineering, Banlgadesh University of Engineering and Technology / Institute of Electronics, Bangladesh Atomic Energy Comission / School of Science, Edith Cowan University
Abstract
We explore the design and optimization of high-efficiency solar cells on low-reflective monocrystalline silicon surfaces using a personal computer one dimensional simulation software tool. The changes in the doping concentration of the n-type and p-type materials profoundly affects the generation and recombination process, thus affecting the conversion efficiency of silicon solar cells. To enhance solar cells' performance, copper nanoparticle (Cu-NP) assisted surface texturization has been employed on the silicon surface with resistivity 1–3 .cm. The surface texturization assists in reducing the surface reflection of silicon by around 0.65%. The doping concentration and the layer thicknesses of a solar cell are optimized and found that 1 × 1014 cm−3 doping concentration at three different thicknesses (5, 10, and 15 m) of the n-type region exhibit the maximum solar cell conversion efficiency of around 26.19%. The optimized design solution shows the best output parameters namely open-circuit voltage (V oc) around 0.749 V, short circuit current (I sc) about 3.987 A, and a fill factor of 26.19% that can be potentially useful for the fabrication of high-efficiency solar cells.
DOI
10.1007/s12596-023-01574-3
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Comments
Zumahi, S. M. A. A., Basher, M. K., Arobi, N., Rahman, M. M., Tawfeek, A. M., Akand, M. A. R., . . . Hossain, M. K. (2024). High-efficiency silicon solar cells designed on experimentally achieved nano-engineered low-reflective silicon surface. Journal of Optics, 53, 3849-3863. https://doi.org/10.1007/s12596-023-01574-3